Indium Tin Patents

US6331240B1 - Tin-indium alloy ... - Google Patents

A tin/indium alloy plating solution not containing any cyanide and serving as a substitute for tin/lead alloy plating is provided. The tin/indium alloy plating solution is a weakly alkaline aqueous solution for tin/indium alloy electroplating, prepared by adding, as metal salts, a tetravalent tin salt of metastannic acid and a trivalent indium salt of an organosulfonic acid, further adding a ...

US 11,155,493 B2 - patentsgazette.uspto.gov

1. A multiple-pane insulating glazing unit having a between-pane space and two opposed external pane surfaces, a desired one of the two external pane surfaces bearing a coating comprising both a first indium tin oxide film and a second indium tin oxide film, the second indium tin oxide film being located over the first indium tin oxide film, the second indium tin oxide film being in contact ...

Indium gallium nitride-based ohmic contact layers for ...

Jang et al. "Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p-In0.15Ga0.85N/p-GaN layer" Journal of Applied Physics 101(1):013711-4 (2007). (APP,APP) Google Patents

Indium-tin mixed oxide powder - Google Patents

Indium-tin mixed oxide powder which consists of primary particle aggregates and contains 50 to 90% by weight indium oxide, calculated as In203, and 10 to 50% by weight tin oxide, calculated as SnO2. It is produced by atomising a solution of an inorganic indium compound and an organic tin compound and burning it in a flame. It may be used for the production of electrically conductive paints and ...

Recovery of lead, tin and indium from alloy wire scrap ...

Fig. 1 is a flow chart of the processes used for recovery of lead, tin and indium from their scrap. The sample was leached in 5 M HCl solution containing 0.6 ml of 1:1 HNO 3 /g scrap at 80°C for 1.45 h. The HCl:scrap stoichiometric ratio was 2.5 (10 ml/g) as mentioned before .A 71.8% segment of the lead content was precipitated as PbCl 2 on cooling the solution down to 10°C.

Method for manufacturing indium-tin-iron catalyst for use ...

A method for manufacturing an indium-tin-iron catalyst that is used to obtain carbon nanocoils that have an external diameter of 1000 nm or less, the method comprising a first process that forms an organic solution by mixing an indium-containing organic compound and a tin-containing organic compound with an organic solvent, a second process that forms an organic film by coating a substrate ...

Method for manufacturing transparent conductive indium-tin ...

A method for applying a transparent, conductive indium-tin oxide coating on a substrate of amorphous, hydrogen-containing silicon wherein an unheated substrate of amorphous hydrogen-containing silicon is treated with sources of indium and tin in a first stage while maintaining a low partial pressure of oxygen until a partial coating is built-up, then reducing the oxygen partial pressure in the ...

Global Indium Tin Oxide (ITO) Coated Glass Market Research ...

1 Indium Tin Oxide (ITO) Coated Glass Market Overview 1.1 Product Overview and Scope of Indium Tin Oxide (ITO) Coated Glass 1.2 Indium Tin Oxide (ITO) Coated Glass Segment by Type 1.2.1 Global Indium Tin Oxide (ITO) Coated Glass Market Size Growth Rate Analysis by Type 2021 VS 2027 1.2.2 Glass Thickness:0.4mm 1.2.3 Glass Thickness:0.7mm

Global and China Indium Tin Oxide (ITO) Sputtering Targets ...

Indium Tin Oxide (ITO) Sputtering Targets market is segmented by region (country), players, by Type, and by Application. Players, stakeholders, and other participants in the global Indium Tin Oxide (ITO) Sputtering Targets market will be able to gain the upper hand as they use the report as a ...

US2649368A - Indium-bismuth-tin alloy - Google Patents

US2649368A US189045A US18904550A US2649368A US 2649368 A US2649368 A US 2649368A US 189045 A US189045 A US 189045A US 18904550 A US18904550 A US 18904550A US 2649368 A US2649368 A US 2649368A Authority US United States Prior art keywords bismuth indium tin alloy alloys cadmium Prior art date Legal status (The legal status is an assumption and is not a …

Indium oxide powder, method for preparing the same, and ...

US-2003178752-A1 chemical patent summary.

Chemical Information Profile for Indium Tin Oxide

indium oxide and tin oxide powders are blended together then compacted by hot or cold isostatic pressing or by sintering to make ITO sputtering targets (compressed blocks of ITO powder). ITO may be formed directly during a coating process, e.g., reactive sputtering from indium-tin alloy targets in the presence of oxygen.

Indium tin oxide powder - Patent JP-5754580-B2 - PubChem

JP-5754580-B2 chemical patent summary.

US5580520A - Lead-free alloy containing tin, silver and ...

US5580520A US08/334,699 US33469994A US5580520A US 5580520 A US5580520 A US 5580520A US 33469994 A US33469994 A US 33469994A US 5580520 A US5580520 A US 5580520A Authority US United States Prior art keywords lead indium alloy tin silver Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.

Patent Pick: Lauder Rides the Infrared Wave with Indium ...

ITO is reportedly a ternary composition of indium, tin and oxygen in varying proportions, typically as 74% indium, 18% oxygen and 8% tin by weight. According to the inventors, one advantage of ITO coated substrates is that they are transparent at visible wavelengths but opaque in the IR and UV ranges. Patent application accessed on Sept. 28, 2018.

US Patent for Laminated diffractive optical element and ...

A laminated diffractive optical element includes a first resin layer having a first lattice shape and a second resin layer having a second lattice shape. The first resin layer and the second resin layer are laminated in this order on a first substrate so that the lattice shapes oppose each other. The first resin layer contains a resin and transparent conductive particles.

Chapter 1.10 - Miscellaneous Etchants

Indium Tin Oxide (ITO) In order to etch ITO it is needed to reduce it to a metallic state. The reactions are: Zn + HCl = H: 2 + ZnCl2 - 6 - Miscellaneous Etchants Chapter 1.10 : H: 2: reduces ITO . SnO. 2 + H. 2 = Sn or SnOx with x smaller than 1 . Sn + HCl = H. 2 + SnCl. 4.

Milestones | Media Center |Indium Corporation

October 1 - The United States patent office issues a patent for "Method of Forming a Gasket of Indium and Braid." ... Indium Corporation develops indium inorganic compounds, including: indium oxide, indium-tin oxide, indium chloride, and indium hydroxide. 1950s. 1959.

US5171401A - Plasma etching indium tin oxide - Google Patents

US5171401A US07/533,232 US53323290A US5171401A US 5171401 A US5171401 A US 5171401A US 53323290 A US53323290 A US 53323290A US 5171401 A US5171401 A US 5171401A Authority US United States Prior art keywords ito plasma etching argon tin oxide Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.

Indium Tin Oxide (ITO) Market at 4.89% of CAGR, Research ...

The global Indium Tin Oxide (ITO) market was valued at 2759.25 Million USD in 2020 and will grow with a CAGR of 4.89% from 2020 to 2027. …

Indium Corporation Expert Receives SMTA Award | Indium ...

Indium Corporation Expert Receives SMTA Award November 2, 2021. Indium Corporation's Ron Lasky, Ph.D., PE, senior technologist, was presented with the Surface Mount Technology Association's (SMTA) Member of Technical Distinction Award following a recognition dinner during SMTA International on Monday, Nov. 1 in Minneapolis, Minn., U.S. "SMTA is the best …

Future Foldable OLED Displays will Replace Indium Tin ...

Future Foldable OLED Displays will Replace Indium Tin Oxide (ITO) with Breakthrough Graphene ... Patent Applications (2001) 1B. Continuation Patents (66) 2. Granted Patents (1491) 3. Patently ...

(12) United States Patent Patent No.: US 8,163,094 B1

reduction of indium oxide to indium metal in molecular 20 hydrogen requires temperatures in excess of380 degrees C. to achieve a reasonable reaction rate. These high temperatures are often not compatible with the types of devices that are typically hybridized. The prior art suggests that indium tin oxide (ITO) can be

Patent application for innovative film - possible Indium ...

On Nov. 5, Iroh filed a provisional patent application with the U.S. Patent Office for a polymer-based film with remarkable properties. The film is highly transparent and electrically conductive.

Method for preparing suspensions and powders based in ...

： Suspensions and powders based on indium tin oxide are prepared by a method in which indium tin oxide precursors are precipitated from solutions in one or more solvents in the presence of one or more surface-modifying components, the solvent(s) are removed from the precipitate, which is then calcined, one or more surface-modifying components and one or more solvents are …

Microstructure and creep of eutectic indium/tin on copper ...

The behavior during creep in shear of eutectic indium-tin joints on copper and nickel substrates was examined in order to determine the effect of creep deformation on the microstructure of the alloy. Primary creep was absent in all the samples tested. The stress exponent at …

Atomic layer epitaxy of hematite on indium tin oxide for ...

Abstract. A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide.

ELECTROCHROMIC NANOCOMPOSITE FILMS - UNIV CALIFORNIA

European Patent EP2737530 . Kind Code: B1 ... 10.1039/c1jm10514k PARK Y T ET AL: "Fast switching electrochromism from colloidal indium tin oxide in tungstate-based thin film assemblies", ELECTROCHIMICA ACTA, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 55, no. 9, 30 March 2010 (), pages 3257-3267, XP026924571, ...